Assoc. Prof. Dr. Yusuf Selamet
|Tel: +90 (232) 750 7712|
|Fax : +90 (232) 750 7707|
|E-mail : yusufselamet(at)iyte.edu.tr|
|Office : G 133|
|[Personal Webpage] [Weekly Schedule]|
|B.Sc., Phys. Education, Dokuz Eylul University, 1991|
|M.Sc., Physics, Illinois Institute of Technology, 1996|
|Ph.D., Physics, University of Illinois at Chicago, 2004|
|Research Areas & Insterests|
|The areas I am mainly interested in are the common areas for Electrical Engineering, Physics and Material Science. My PhD work was on growth and characterization of HgCdTe IR detector devices carried on Microphysics Laboratory of University of Illinois-Chicago.
Nanotechnology is a general name for manufacturing, manipulating, measuring matter below 100 nm (1nm=10-9 m), and it is today’s one of the hot topics. Recent achievements using nanotechnology on biotechnology, materials and solid state science attracted great attention.
HgCdTe is interesting alloy showing both semimetalic and semiconductive properties depending on the Cd mole fraction. On the MBE growth surface Hg preferentially re-evaporates from the surface, leading to Hg-deficient growth. This makes in situ characterization of the growth very important for the sake of the quality of the growing layers.
Currently we are working on building hot-wire chemical deposition (HWCVD) chamber to grow microcrystalline and amorphous silicone thin films on various substrates for solar cell applications.
Tunable direct bandgap semiconductor, such as HgCdTe, is the most efficient IR radiation detector among others.
|1. Electrical properties of in situ As doped Hg1-xCdxTe epilayers grown by molecular beam epitaxy,
Y. Selamet, C. H. Grein, T. S. Lee and S. Sivananthan,
J. Vacuum Sci. Technol. B 19 1488-1491 (2001).
H. Grein and S. Sivananthan, Y. Selamet, Y. D. Zhou, J. Zhao, Y. Chang, C. R. Becker R. Ashokan, C.,
J. Electron. Mater. 32 608-614 (2004).
|List of the publications|
|Click here for the curriculum vitae|