Yusuf Selamet Publication List

  1. Development of electrically conductive and anisotropic gel-coat systems using CNTs,
    A. Ince Yardimci, M. Tanoglu, Y. Selamet,
    Progress in Organic Coatings 76, 963–965 (2013).
  2. High quality ITO thin films grown by DC and RF sputtering without oxygen,
    O. Tuna, et al.,
    Journal of Physics D: Applied Physics, vol. 43, p. 055402, 2010.
  3. Carbon nanotube diameter tuning using hydrogen amount and temperature on SiO2/Si substrates,
    M. Aksak and Y. Selamet,
    Applied Physics A: Materials Science & Processing, DOI: 10.1007/s00339-010-5578-3, 2010.
  4. Effect of substrate temperature on structural, electrical and optical properties of indium tin oxide grown by dc magnetron sputtering
    O. Tuna, Y. Selamet, G. Aygun, F. Turtoglu, L. Ozyuzer,
    Journal of Optoelectronics and Advanced Materials – Symposia, Vol. 1, No. 3, 2009, p. 404 – 407.
  5. Effect of the growth temperature on carbon nanotubes grown by thermal chemical vapor deposition method
    M. Aksak, S. Kir, Y. Selamet,
    Journal of Optoelectronics and Advanced Materials – Symposia, Vol. 1, No. 3, 2009, p.281 -284.
  6. Effects of Li Substitution in Bi-2223 Superconductors,
    O. Bilgili, et al.,
    Journal of Superconductivity and Novel Magnetism, vol. 21, pp. 439-449, 2008.
  7. Growth and characterization of carbon nanostructures,
    Y. Selamet and G. Yuce,
    in Six International Conference of the Balkan Physical Union. vol. 899, 2007, pp. 459-460.
  8. HgTe/HgCdTe superlattices grown on CdTe/Si by molecular beam epitaxy for infrared detection,
    Y. Selamet, et al.,
    Journal of Electronic Materials, vol. 33, pp. 503-508, Jun 2004.
  9. HgCdTe for far-infrared heterodyne detection,
    Y. D. Zhou, et al.,
    in Materials for Infrared Detectors Iii. vol. 5209, 2003, pp. 99-106.
  10. Far-infrared detector based on HgTe/HgCdTe superlattices,
    Y. D. Zhou, et al.,
    Journal of Electronic Materials, vol. 32, pp. 608-614, Jul 2003.
  11. Gold diffusion in mercury cadmium telluride grown by molecular beam epitaxy,
    Y. Selamet, et al.,
    in Materials for Infrared Detectors Iii. vol. 5209, 2003, pp. 67-74.
  12. Progress in far-infrared detection technology,
    Y. D. Zhou, et al.,
    in Materials for Infrared Detectors Ii. vol. 4795 , 2002, pp. 121-128.
  13. Extrinsic p-type doping and analysis of HgCdTe grown by molecular beam epitaxy,
    Y. Selamet, et al.,
    in Materials for Infrared Detectors Ii. vol. 4795, 2002, pp. 8-16.
  14. MBE growth of HgCdTeHOT detector heterostructures,
    J. Zhao, et al.,
    in Materials for Infrared Detectors Ii. vol. 4795 , 2002, pp. 82-87.
  15. HgCdTe/CdTe/Si infrared photodetectors grown by MBE for near-room temperature operation,
    S. Velicu, et al.,
    Journal of Electronic Materials, vol. 30, pp. 711-716, Jun 2001.
  16. Electrical properties of in situ As doped Hg1-xCdxTe epilayers grown by molecular beam epitaxy,
    Y. Selamet, et al.,
    Journal of Vacuum Science & Technology B, vol. 19, pp. 1488-1491, Jul-Aug 2001.
  17. MBE growth and device processing of MWIR HgCdTe on large area Si substrates,
    G. Brill, et al.,
    Journal of Electronic Materials, vol. 30, pp. 717-722, Jun 2001.
  18. Electrical activation and electrical properties of arsenic doped Hg1-xCdxTe epilayers grown by MBE,
    Y. Selamet, et al.,
    in Materials for Infrared Detectors. vol. 4454, 2001, pp. 71-77.
  19. Correlation of arsenic incorporation and its electrical activation in MBE HgCdTe,
    T. S. Lee, et al.,
    Journal of Electronic Materials, vol. 29, pp. 869-872, Jun 2000.